| Title: | A POLYSILICON-ON-OXIDE (POSOX) ISOLATION STRUCTURE FOR BIPOLAR INTEGRATED-CIRCUITS |
| Authors: | LEE, CL TAN, FL WU, NW TANG, RB 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| Issue Date: | 1-Aug-1987 |
| URI: | http://hdl.handle.net/11536/4625 |
| ISSN: | 0038-1101 |
| Journal: | SOLID-STATE ELECTRONICS |
| Volume: | 30 |
| Issue: | 8 |
| Begin Page: | 841 |
| End Page: | 845 |
| Appears in Collections: | Articles |
- Characteristics of vertical thermal/PECVD polysilicon oxides formed on the sidewall of polysilicon films / Lee, MZ;Chang, YA;Lee, CL;Lei, TF
- ESD protection design for CMOS RF integrated circuits using polysilicon diodes / Ker, MD;Chang, CY
- Ultra-high-voltage charge pump circuit in low-voltage bulk CMOS processes with polysilicon diodes / Ker, Ming-Dou;Chen, Shih-Lun
- On-chip high-voltage charge pump circuit in standard CMOS processes with polysilicon diodes / Ker, Ming-Dou;Chen, Shih-Lun
- 矽質單晶微波積體電路電晶體之研製 / 張傳理;Chuan-Li Chang;蘇 翔;Shyang Su
- A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISH / CHENG, JY;LEI, TF;CHAO, TS
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