SELECTIVE EPITAXY ON SILICON BY ATMOSPHERIC-PRESSURE SIH4-HCL CVD

Title:	SELECTIVE EPITAXY ON SILICON BY ATMOSPHERIC-PRESSURE SIH4-HCL CVD
Authors:	HSIEH, TP LEE, CL LEI, TF 電控工程研究所 Institute of Electrical and Control Engineering
Issue Date:	1-Mar-1986
URI:	http://hdl.handle.net/11536/4765
ISSN:	0013-4651
Journal:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume:	133
Issue:	3
Begin Page:	C105
End Page:	C105
Appears in Collections:	Articles