A NEW DYNAMIC RANDOM-ACCESS MEMORY CELL USING A BIPOLAR MOS COMPOSITE STRUCTURE

Title:	A NEW DYNAMIC RANDOM-ACCESS MEMORY CELL USING A BIPOLAR MOS COMPOSITE STRUCTURE
Authors:	WU, CY 交大名義發表電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering
Issue Date:	1983
URI:	http://hdl.handle.net/11536/4904
ISSN:	0018-9383
Journal:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	30
Issue:	8
Begin Page:	886
End Page:	894
Appears in Collections:	Articles

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