| Title: | CURRENT TRANSPORT ACROSS A GRAIN-BOUNDARY IN POLYCRYSTALLINE SEMICONDUCTORS |
| Authors: | LU, CY LU, NCC 電控工程研究所 Institute of Electrical and Control Engineering |
| Issue Date: | 1983 |
| URI: | http://hdl.handle.net/11536/4936 |
| ISSN: | 0038-1101 |
| Journal: | SOLID-STATE ELECTRONICS |
| Volume: | 26 |
| Issue: | 6 |
| Begin Page: | 549 |
| End Page: | 557 |
| Appears in Collections: | Articles |
- CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM / LIN, HY;LEI, TF;LIN, HC;CHANG, CY;TWU, RC
- A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS / LU, NC;GERZBERG, L;LU, CY;MEINDL, JD
- 複晶矽薄膜電晶體晶粒邊界位障效應之研究 / 丘兆仟;Chao-Chian Chiu;冉曉雯;Hsiao-Wen Zan
- Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing / Tseng, CH;Lin, CW;Teng, TH;Chang, TK;Cheng, HC
- AN ANALYTICAL MODEL FOR THE ABOVE-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS / CHERN, HN;LEE, CL;LEI, TF
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