| Title: | POST-EPITAXIAL POLYSILICON AND SI3N4 GETTERING IN SILICON |
| Authors: | CHEN, MC SILVESTRI, VJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1982 |
| URI: | http://hdl.handle.net/11536/4954 |
| ISSN: | 0013-4651 |
| Journal: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Volume: | 129 |
| Issue: | 6 |
| Begin Page: | 1294 |
| End Page: | 1299 |
| Appears in Collections: | Articles |
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- 藉鎳捉聚改善鎳金屬誘發側向結晶之低溫複晶矽薄膜及奈米通道電晶體效能研究 / 王寶明;Wang, Bau-Ming;吳耀銓;Wu, Yew-Chung
- CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCE / CHEN, TP;LEI, TF;LIN, HC;CHANG, CY
- PRE-EPITAXIAL AND POST-EPITAXIAL GETTERING OF STACKING-FAULTS IN SILICON / CHEN, MC;SILVESTRI, VJ
- INVESTIGATION ON THE INTERFACE OF THE POLYCRYSTALLINE SILICON CONTACTED DIODE FORMED WITH A STACKED AMORPHOUS-SILICON FILM / WU, SL;LEE, CL;LEI, TF;LEE, TL;CHEN, LJ
- INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS / CHEN, TP;LEI, TF;CHANG, CY;HSIEH, WY;CHEN, LJ
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