| Title: | THE SELF-CONSISTENT ANALYSIS OF THE ON-SET OF STRONG INVERSION IN AN MOS-TRANSISTOR WITH DOUBLE-LAYER SUBSTRATE IMPURITY PROFILE |
| Authors: | YU, SY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1981 |
| URI: | http://hdl.handle.net/11536/5025 |
| ISSN: | 0038-1101 |
| Journal: | SOLID-STATE ELECTRONICS |
| Volume: | 24 |
| Issue: | 8 |
| Begin Page: | 725 |
| End Page: | 729 |
| Appears in Collections: | Articles |
- Physics of Discrete Impurities under the Framework of Device Simulations for Nanostructure Devices / Sano, Nobuyuki;Yoshida, Katsuhisa;Yao, Chih-Wei;Watanabe, Hiroshi
- A quantum correction Poisson equation for metal-oxide-semiconductor structure simulation / Li, YM
- A new method for extracting the counter-implanted channel profile of enhancement-mode p-MOSFET's / Wu, CM;Wu, CY
- A unified quantum correction model for nanoscale single- and double-gate MOSFETs under inversion conditions / Li, YM;Yu, SM
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