| Title: | INTERFACIAL LAYER THEORY OF THE SCHOTTKY-BARRIER DIODES |
| Authors: | WU, CY 電控工程研究所 奈米中心 Institute of Electrical and Control Engineering Nano Facility Center |
| Issue Date: | 1980 |
| URI: | http://hdl.handle.net/11536/5039 http://dx.doi.org/10.1063/1.328115 |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/1.328115 |
| Journal: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 51 |
| Issue: | 7 |
| Begin Page: | 3786 |
| End Page: | 3789 |
| Appears in Collections: | Articles |
- INTERFACIAL LAYER-THERMIONIC-DIFFUSION THEORY FOR THE SCHOTTKY-BARRIER DIODE / WU, CY
- A CHARACTERIZATION TECHNIQUE FOR THE DEGRADATION CHARACTERISTICS OF TI/SI SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS AFTER THERMAL SILICIDATION / LOU, YS;WU, CY
- A SIMPLE INTERFACIAL-LAYER MODEL FOR THE NONIDEAL IV AND C-V CHARACTERISTICS OF THE SCHOTTKY-BARRIER DIODE / TSENG, HH;WU, CY
- A SELF-CONSISTENT CHARACTERIZATION METHODOLOGY FOR SCHOTTKY-BARRIER DIODES AND OHMIC CONTACTS / LOU, YS;WU, CY
- Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC / Tsui, Bing-Yue;Cheng, Jung-Chien;Yen, Cheng-Tyng;Lee, Chawn-Ying
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