| Title: | THERMIONIC FIELD-EMISSION IN POLYCRYSTALLINE-SILICON FILMS |
| Authors: | LU, NCC GERZBERG, L LU, CY MEINDL, JD 電控工程研究所 Institute of Electrical and Control Engineering |
| Issue Date: | 1980 |
| URI: | http://hdl.handle.net/11536/5075 |
| ISSN: | 0013-4651 |
| Journal: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Volume: | 127 |
| Issue: | 8 |
| Begin Page: | C396 |
| End Page: | C396 |
| Appears in Collections: | Articles |
- Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel / Lin, Zer-Ming;Lin, Horng-Chih;Chen, Wei-Chen;Huang, Tiao-Yuan
- A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS / LU, NC;GERZBERG, L;LU, CY;MEINDL, JD
- 蕭特基阻障多晶矽薄膜電晶體之研製 / 黃若谷;Ruo Gu Huang;黃調元;林鴻志;Tiao-Yuan Huang
- CHARACTERISTICS OF POLYCRYSTALLINE FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SYSTEM / LIN, HY;LEI, TF;LIN, HC;CHANG, CY;TWU, RC
- A Reliable Schottky Barrier Height Extraction Procedure / Tsui, Bing-Yue;Fu, Tze-Yu
- Novel low-temperature polysilicon thin-film transistors with a self-aligned gate and raised source/drain formed by the damascene process / Chang, Kow Ming;Lin, Gin Min;Yang, Guo Liang
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