| Title: | TI-TIO2 GATED MOS DIODE LIGHT SENSOR |
| Authors: | CHANG, CY KAO, CW LEI, TF 電控工程研究所 Institute of Electrical and Control Engineering |
| Issue Date: | 1978 |
| URI: | http://hdl.handle.net/11536/5114 |
| ISSN: | 0038-1101 |
| Journal: | SOLID-STATE ELECTRONICS |
| Volume: | 21 |
| Issue: | 6 |
| Begin Page: | 891 |
| End Page: | 896 |
| Appears in Collections: | Articles |
- Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics / Singh, Eric;Singh, Pragya;Kim, Ki Seok;Yeom, Geun Young;Nalwa, Hari Singh
- Solution-Processed Hybrid Light-Emitting Devices Comprising TiO2 Nanorods and WO3 Layers as Carrier-Transporting Layers / Tsai, Tsung-Yan;Yan, Po-Ruei;Yang, Sheng-Hsiung
- ESD implantations for on-chip ESD protection with layout consideration in 0.18-mu m salicided CMOS technology / Ker, MD;Chuang, CH;Lo, WY
- The Differences in Optical Characteristics of TiO2 and TiO2/AAO Nanotube Arrays Fabricated by Atomic Layer Deposition / Chang, Yung-Huang;Liu, Chien-Min;Chen, Chih;Cheng, Hsyi-En;Lu, Tien-Chang
- The heterojunction effects of TiO2 nanotubes fabricated by atomic layer deposition on photocarrier transportation direction / Chang, Yung-Huang;Liu, Chien-Min;Chen, Chih;Cheng, Hsyi-En
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