Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure

Title:	Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure
Authors:	Ortiz-Conde, A. Rey, A. D. Latorre Liu, W. Chen, W. -C. Lin, H. -C. Liou, J. J. Muci, J. Garcia-Sanchez, F. J. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	Parameter extraction;Threshold voltage;Subthreshold Slope;Double integration;Successive integration;Polysilicon;Nanowire;MOSFETs;Noise reduction
Issue Date:	1-Jun-2010
Abstract:	A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. The threshold voltage and Subthreshold Slope factor are extracted from noisy measured current-voltage characteristics. It is shown that the present method offers advantages over previous extraction procedures regarding data noise reduction. In addition, the normalized mutual integral difference operator method is scrutinized and an improvement of the method is presented. (C) 2010 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2010.01.011 http://hdl.handle.net/11536/5303
ISSN:	0038-1101
DOI:	10.1016/j.sse.2010.01.011
Journal:	SOLID-STATE ELECTRONICS
Volume:	54
Issue:	6
Begin Page:	635
End Page:	641
Appears in Collections:	Articles

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