| Title: | QUASI-STATIC ANALYSIS OF X-BAND DOUBLE-DRIFT LO-HI-LO SILICON IMPATT DIODES |
| Authors: | CHANG, MC CHEN, MC 交大名義發表 電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1978 |
| URI: | http://hdl.handle.net/11536/5637 |
| ISSN: | 0020-7217 |
| Journal: | INTERNATIONAL JOURNAL OF ELECTRONICS |
| Volume: | 45 |
| Issue: | 1 |
| Begin Page: | 37 |
| End Page: | 48 |
| Appears in Collections: | Articles |
- X頻帶雙飄移高低高矽衝渡二極體之準靜態設計規範 / 張懋中;陳茂傑;Mau-Chung Chang;Mao-Chieh Chen
- 空乏區寬度之調變效應對高低高雙飄帶衝度二極體之影響 / 張懋中;陳茂傑;M.C.Chang;M.C.Chen
- LARGE-SIGNAL ANALYSIS OF LO-HI-LO DOUBLE-DRIFT SILICON IMPATT DIODES AT 50 GHZ / CHANG, LC;HU, DH
- DESIGN CONSIDERATIONS OF HIGH-EFFICIENCY DOUBLE-DRIFT SILICON IMPATT DIODES / CHANG, LC;HU, DH;WANG, CC
- SHIFTING OF PEAK GENERATION RATE IN DOUBLE-DRIFT SILICON IMPATT DIODES / CHANG, L;SU, S
- Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by P(+) substrate / Meng, CC
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