雙載子電晶體中高注入電流之研究

Abstract

本論文主要針對多晶射極雙載子電晶體及鍺矽異質接面雙載子電晶體提出 一個解析模型以得到靜態及高頻特性, 和它們的射極耦合邏輯電路暫態行 為之影響。我們集中以下的高注入效應:改良的Webster 效應、注入載子 儲存效應及基極電阻。我們發現這個模型於以下情形必須被使用以得到正 確的元件特性及電路性能: 雙載子電晶體基射極偏壓於0.8 到 0.9伏特、 多晶射極雙載子電晶體基射極偏壓於0.85到 0.9伏特及多晶射極雙載子電 晶體基射極偏壓於0.78到 0.9伏特。我們發現高注入效應在 77K較明顯。 This dissertation presents an analytical model to get static and high-frequency performances of the poly-emitter bipolar transistor and the GeSi hetero-junction bipolar transistor, and the transient behavior of their emitter- couple logic. We have focused on the high-level injection effects: modified Webster effect, injected carriers storage effect, and base resistance. We have found that this model must be used to give accurate device characteristics (the applied voltages between base and emitter are 0.8 to 0.9 V for bipolar transistor, 0.85 to 0.9 V for poly-emitter bipolar transistor, and 0.78 to 0.9 V for poly- emitter GeSi hetero-junction bipolar transistor). We have found that high-level injection is much pronounced at 77 K.