次微米元件中因熱載子入射引發之可靠度問題之物理、模擬與量測

Title:	次微米元件中因熱載子入射引發之可靠度問題之物理、模擬與量測 Physics, simulation and characterization of hot carrier injection induced reliability issues in submicron MOSFET's
Authors:	黃智睦 Huang, Zhi Mu 汪大暉 Wang, Da Hui 電子研究所
Issue Date:	1993
URI:	http://140.113.39.130/cdrfb3/record/nctu/#NT822430015 http://hdl.handle.net/11536/58528
Appears in Collections:	Thesis

APA	黃., Huang, Z. Mu, 汪., & Wang, D. Hui (1993). 次微米元件中因熱載子入射引發之可靠度問題之物理、模擬與量測. http://hdl.handle.net/11536/58528.
Bibtex	@article{黃智睦 and Huang1993, title={次微米元件中因熱載子入射引發之可靠度問題之物理、模擬與量測}, author={黃智睦 and Huang, Zhi Mu and 汪大暉 and Wang, Da Hui}, journal={http://hdl.handle.net/11536/58528}, year={1993}, url={https://ir.lib.nycu.edu.tw/handle/11536/58528}, }