| Title: | 以大傾鈄角度離子佈植汲極製程改進深次微米金氧半電晶體之熱載子可靠度之研究 An investigation of large-angle-tilt implanted drain process for improving hot carrier reliability |
| Authors: | 周志文 Zhou, Zhi Wen 張俊彥 Zhang, Jun Yan 電子研究所 |
| Issue Date: | 1993 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT822430019 http://hdl.handle.net/11536/58532 |
| Appears in Collections: | Thesis |
- Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation / Shieh, MS;Lin, YJ;Yu, CM;Lei, TF
- A study of tilt angle effect on Halo PMOS performance / Su, JG;Wong, SC;Huang, CT
- BF2表面反攙雜植入對N型金氧半場效電晶體之效應研究 / 陳淮義;Hua-I Chen;張俊彥;Chun-Yen Chang
- NEW LARGE-ANGLE TILT IMPLANTED DRAIN STRUCTURE - SURFACE COUNTER-DOPED-LIGHTLY DOPED DRAIN FOR HIGH HOT-CARRIER RELIABILITY / CHOU, JW;CHANG, CY;HUANG, C;HO, LT;KO, J
- The effect of thermal treatment on device characteristic and reliability for sub-100-nm CMOSFETs / Yeh, WK;Fang, YK;Chen, MC
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