| Title: | 磊晶互補式金氧半中少數載子井狀保護環的特性分析、模擬及模式化 Characterization, simulation, and modeling of minority-carrier well-type guard rings in epitaxial CMOS |
| Authors: | 黃至堯 陳明哲 電子研究所 |
| Issue Date: | 1994 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT836430105 http://hdl.handle.net/11536/59948 |
| Appears in Collections: | Thesis |
- ANALYTICAL DESIGN FORMULATION FOR MINORITY-CARRIER WELL-TYPE GUARD RINGS IN CMOS CIRCUITS / CHEN, MJ;HUANG, CY;TSENG, PN
- DESIGN-MODEL AND GUIDELINE FOR N-WELL GUARD RING IN EPITAXIAL CMOS / HUANG, CY;CHEN, MJ
- Well supply voltage effect on escape current of guard rings in epitaxial CMOS technology / Huang, CY;Chen, MJ
- Low-temperature characteristics of well-type guard rings in epitaxial CMOS / Huang, CY;Chen, MJ;Jeng, JK;Wu, CY
- A model for low-temperature operation of minority-carrier well-type guard rings in epitaxial CMOS structures / Huang, CY;Chen, MJ
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