| Title: | 深次微米逆離子佈植p通道金氧半場效電晶體之參數萃取及元件模式的新技術 = New techniques for parameter extraction and device models of deep-submicrometer counter-implanted p-MOSFET's |
| Authors: | 吳健民 吳慶源 電子研究所 |
| Issue Date: | 1996 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT856430117 http://hdl.handle.net/11536/62552 |
| Appears in Collections: | Thesis |
- A new method for extracting the channel-length reduction and the gate-voltage-dependent series resistance of counter-implanted p-MOSFET's / Wu, CM;Wu, CY
- A new method for extracting the counter-implanted channel profile of enhancement-mode p-MOSFET's / Wu, CM;Wu, CY
- 深次微米n通道金氧半場效電晶體之參數萃取及元件模式的新技術 / 簡育生;Jian, Yu-Sheng;吳慶源;Wu, Qing-Yuan
- 深次微米n通道金氧半場效電晶體之參數萃取及元件模式的新技術 / 簡育生;Jean, Yuh-Sheng;吳慶源;Ching-Yuan Wu
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