| Title: | 金屬層間介電層和複晶矽介電層之研究及其對深次微米元件之影響 = Study of intermetal and interpoly-silicon dielectrics processes and their impacts on deep-submicron MOSFETs |
| Authors: | 林友民 雷添福 電子研究所 |
| Issue Date: | 1996 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT856430122 http://hdl.handle.net/11536/62559 |
| Appears in Collections: | Thesis |
- Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation / Chao, TS;Chang, TH
- 超薄氮化矽氧化層金氧半場效電晶體特性之研究 / 唐宇駿;Yu Chun Tang;張俊彥;Chun Yen Chang
- A physical model for hole direct tunneling current in P+ poly-gate PMOSFETs with ultrathin gate oxides / Yang, KN;Huang, HT;Chang, MC;Chu, CM;Chen, YS
- Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs / Yang, KN;Huang, HT;Chen, MJ;Lin, YM;Yu, MC
- High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices / Yang, WL;Chao, TS;Cheng, CM;Pan, TM;Lei, TF
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