結合電性分析和顯微鏡測定技術應用到半導體元件之故障分析

Abstract

本論文中主要是針對IC產品在系統廠生產後之故障分析，因為該種類的IC數量常常僅有一到兩個，要求分析的時程又比一般分析的短，所以需要更有效率以及命中率更高的故障分析方法，在本篇論文中我們提出了電性故障分析結合微光顯微鏡測定技術的故障分析技術。 從系統廠反應系統異常到初判確認異常原因是否為IC所造成，如果經過初步判斷手法卻認為IC所造成系統異常，IC將取回到內部進行進一步的電性故障分析，此時將根據其異常原因，將IC切換不同的電壓以及程式，觀察波型的變化，來做電性故障分析確認異常可能的區塊，並且提供電路佈局圖(layout) ，在微光顯微鏡底下找尋其異常熱點，當有異常熱點時候，在開始進一步的物理性故障分析，此時必須要根據亮點來判斷要逐層去除的以及要使用掃描式電子顯微鏡觀察的地方，以上這些步驟經過三個實驗證明都可以比傳統的手法更有效率地找到異常真因，這些方式未來都可以應用在其他型態的IC，讓故障分析更有效率。

This study was focused on failure analysis for custom product with end terminal production return. Because there is only one or two sample from board level return, the priority of this case event is emergent for tracing all the effecting reason. We propose an efficient way to short the analysis time and develop a failure analysis scheme to fit custom requirement. In this thesis, we report the combination of electrical probing and photo emission microscope techniques. As to the surface mount technology (SMT) response, this system was demonstrated the abnormal characteristics. We preliminarily judge as the possible failure site. If the failed effect is resulted from IC, this sample should be further failure analysis. By change different test pattern and operating voltage, this condition could be determined as the the failure mode. From the different waveform and co-observed phenomenon, we can approach the suspected area in the chip. This sample is further inspected with emission microscope to find abnormal hot spot. If there is abnormal hot spot, it should be further physical failure analysis. According to the hot spot, this sample should be delayer and check the suspected area by SEM. The final deteriorated reason of this failure chip is determined from our proposed scheme for failure analysis.