以濺鍍法製備氧化鋯材料作為雙穩態電阻轉換記憶體之特性研究

Abstract

來，各類新式非揮發性記憶受到廣泛的注意。其中，具有雙穩態電阻值之電阻式隨機存取記憶體，因其具有非揮發性、低功率、高密度及多狀態記憶位元等特性，而吸引了研究者們對此方面之興趣。因此，電阻式記憶體儼然成為下一世代非揮發性記憶體選擇之一。 在這篇論文中，採用二元氧化物-氧化鋯，做為電阻轉態元件材料。二元氧化材料應用於電阻轉態記憶體具有非常多吸引人之優點且容易利用疊層技術做到高密度。舉例來說二氧化鋯之組成結構簡單，且是CMOS中常用的材料，具有低溫製程等特性，可以很輕易地再做疊加，進而增加元件密度。值得一提的是，氧化鋯材料應用在半導體產業中也有相當一段時間，這都是它未來發展的利基所在。 在此論文第一章節裡，會先簡單介紹各式記憶體元件，再進一步介紹電阻式記憶體操作方式、導電機制和目前發表過的陣列形式。於論文第二章中介紹實驗過程中所使用之設備以及方式。最後，再對電性方面之量測以及材料分析做綜合比較，以現今所提出之電阻轉態機制為基礎，並進一步提出藉由氧離子之移動所造成之氧化還原為電阻轉換原理。

Recently, many kinds of new nonvolatile memory manufactured from different materials have attracted large attention. The resistance random access memory (RRAM) which has bistable resistive switching character started to attract the research community’s interest again as a nonvolatile, low power, high density, and multi-bit operating memory. Accordingly, RRAM has been proposed to be one candidate of next generation nonvolatile memories. In this thesis, the RRAM devices were manufactured based on binary oxide material-ZrO2. The binary oxide resistive memory has many attracting points enabling it to be easily combined with these density multiplying technologies. For examples, its simple cell structure, CMOS-friendly materials, and low process temperature all make it easy to add up another memory layer on top of the other ones. In addition, the ZrO2 materials have been used in semiconductor industry for a long time, and it is also the benefit for the future development. At the first chapter of this thesis, we introduce the various kinds of memories and then, introduce basic operation, conduction mechanisms, and memory array forms. The experimental equipments and methods will be introduced in the chapter two. Finally, the results of total electrical measurements and material analyses will be concluded, elucidating the probably mechanisms of the resistive switching properties.