Title: 利用電流模式的24-GHz互補式金氧半傳送器前端電路
A 24-GHz CMOS Current-Mode Transmitter Front-End
Authors: 許順維
Shun-Wei Hsu
吳重雨
Chung-Yu Wu
電子研究所
Keywords: 射頻;金氧半;傳送器;RF;CMOS;transmitter
Issue Date: 2008
Abstract: 具有高操作頻率高傳輸速率的通訊系統已被視為次世代通訊系統的主軸。在最近幾年,24-GHz附近的頻帶中,已有許多頻帶如24.05–24.25-GHz的ISM-band 及22–29 GHz被FCC釋出作為汽車雷達應用等用途。 此論文中介紹利用電流模式來實現一個操作在24 GHz的傳送器前端電路。此傳送器包含了升頻混波器以及功率放大器等電路並且使用了0.13-□m CMOS技術來設計並製造。藉由電流模式來實現升頻混波器以及功率放大器,使得大訊號操作的傳送器電路不會受限於0.13-□m CMOS的1.2 V供應電壓。 此傳送器前端電路包含了升頻混波器以及功率放大器等電路,已被模擬、實現於1.05 mm2的晶片面積、以及量測。根據量測結果,此電路由於佈局時的錯誤、EM、製程以及溫度效應的考慮沒有詳盡,使得增益降至11.5 dB。然而,從修改後的模擬結果與其它所發表的傳送器電路比較可知,此電路操作在較低的供應電壓下,仍有較好的線性度。因此,電流模式的電路非常適合用在低供應電壓的製程,尤其是高整合度、低成本的CMOS製程。
In the next-generation wireless communication, high data rate transmission with a high operating frequency is expected to be realized. Over the past few years, the 24.05–24.25-GHz Industrial, Scientific, and Medical (ISM) band, 22–29 GHz band provided by Federal Communications Commission (FCC) for the operation of vehicular radar have been released. In this thesis, a 24-GHz current-mode transmitter front-end is presented. The proposed transmitter which consists of an up-conversion mixer and a power amplifier is designed using 0.13-□m CMOS technology. By adopting the current-mode approach for design mixer and power amplifier, the large-signal operated transmitter circuit can be implemented under the typical supply voltage 1.2-V of 0.13-□m CMOS technology. The proposed transmitter front-end, including a mixer and a power amplifier, is simulated, fabricated with a chip size of 1.05 mm2, and measured. Because of the layout mistake, and the effects such as EM, corner and temperature which are not carefully considered before fabrication, the measured power gain decreases to 11.5 dB. Comparing the results of the re-design transmitter with other proposed transmitter circuits, however, the current-mode transmitter can have better linearity under lower supply voltage. Therefore, current-mode circuits are suitable for low supply voltage technology, especially for high-integrated low-cost CMOS technology.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009411603
http://hdl.handle.net/11536/80517
Appears in Collections:Thesis


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