| Title: | 電阻式記憶元件操作特性與可靠性之統計測量及三度空間原子與電荷傳輸模擬 Statistical Characterization and 3D Atomistic Simulation Based on Electron Hopping and Thermo-chemical Dielectric Breakdown in RRAM |
| Authors: | 汪大暉 WANG TAHUI 國立交通大學電子工程學系及電子研究所 |
| Issue Date: | 2013 |
| Gov't Doc #: | NSC102-2221-E009-096-MY2 |
| URI: | http://hdl.handle.net/11536/90530 https://www.grb.gov.tw/search/planDetail?id=3096850&docId=418031 |
| Appears in Collections: | Research Plans |
- 電阻式記憶元件操作特性與可靠性之統計測量及三度空間原子與電荷傳輸模擬 / 汪大暉;WANG TAHUI
- (鎳、鈦與鎢)氧化物之電性及應用於電阻式隨機記憶體研究 / 李明道;Lee, Ming-Daou;姚永德;Yao, Yeong-Der
- Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide / Cheng, C. H.;Chen, P. C.;Wu, Y. H.;Wu, M. J.;Yeh, F. S.
- 應用時依介電層崩潰理論於電阻式記憶體可靠度與切換機制之研究 / 劉仁傑;Liu, Jen-Chieh;侯拓宏;Hou, Tuo-Hung
- 電阻式記憶體操作後導致缺陷產生與寫入干擾錯誤時間劣化之研究 / 林汶潔;Lin, Wen-Chieh;汪大暉;Wang, Tahui
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