鍺電晶體之費米能階鎖定及介面反應的探討與改進

Title:	鍺電晶體之費米能階鎖定及介面反應的探討與改進 Ge NMOSFET Improvement by Lowering Fermi-Level Pinning and Interface Reaction
Authors:	荊鳳德 CHIN ALBERT 國立交通大學電子工程學系及電子研究所
Issue Date:	2013
Gov't Doc #:	NSC102-2221-E009-100-MY3
URI:	http://hdl.handle.net/11536/90630 https://www.grb.gov.tw/search/planDetail?id=3098333&docId=418449
Appears in Collections:	Research Plans