| Title: | 高介電氧化層奈米CMOS元件可靠性關鍵問題及界面量測技術研究(I) Key Reliability Issues and Interface Characterization Techniques for High-K Nano-CMOS Devices (I) |
| Authors: | 莊紹勳 Chung Steve S 國立交通大學電子工程學系 |
| Issue Date: | 2003 |
| Gov't Doc #: | NSC92-2215-E009-059 |
| URI: | http://hdl.handle.net/11536/91858 https://www.grb.gov.tw/search/planDetail?id=873536&docId=167355 |
| Appears in Collections: | Research Plans |
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- 高介電氧化層奈米CMOS元件可靠性關鍵問題及界面量測技術研究(II) / 莊紹勳;Chung Steve S
- 低電壓互補式金氧半製程下的高電壓電路設計 / 陳世倫;Shih-Lun Chen;柯明道;Ming-Dou Ker
- The incremental frequency charge pumping method: Extending the CMOS ultra-thin gate oxide measurement down to 1nm / Chung, Steve S.
- Low leakage reliability characterization methodology for advanced CMOS with gate oxide in the 1nm range / Chung, SS;Feng, HJ;Hsieh, YS;Liu, A;Lin, WM
- 量子線矽、鍺、砷化鎵奈米CMOS元件內電荷傳輸模擬與可靠性 / 汪大暉;WANG TAHUI
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