| Title: | Dynamic stress effects on the reliability of poly-Si TFT |
| Authors: | Kuo, Yan-Fu Huang, Shih-Che Shih, Wei-Lun Tai, Ya-Hsiang 光電工程學系 Department of Photonics |
| Issue Date: | 2007 |
| Abstract: | The degradation of poly-Si TFT under different gate pulse waveforms is investigated. The mobility degradation is analyzed with the lateral transient electric field and carrier numbers near the channel edges. A proposed index fairly depicts the device degradation, which is helpful in evaluating lifetime for the poly-Si TFT circuits. |
| URI: | http://hdl.handle.net/11536/9190 |
| ISBN: | 978-957-28522-4-8 |
| Journal: | IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 |
| Begin Page: | 497 |
| End Page: | 499 |
| Appears in Collections: | Conferences Paper |
- Analysis of P-type poly-Si TFT degradation under dynamic gate voltage stress using the slicing model / Huang, Shih-Che;Tsao, Hung-Chuan;Tai, Ya-Hsiang
- Electrical degradation of N-channel poly-Si TFT under AC stress by C-V measurement / Lu, Hau-Yan;Liu, Po-Tsun;Chang, Ting-Chang;Chi, Sein
- Degradation Mechanism of Poly-Si TFTs Dynamically Operated in OFF Region / Tai, Ya-Hsiang;Huang, Shih-Che;Chen, Po-Ting
- Characterization of the Channel-Shortening Effect on P-Type Poly-Si TFTs / Tai, Ya-Hsiang;Huang, Shih-Che;Chen, Po-Ting
- Electrical degradation of N-channel poly-Si TFT under AC stress / Chen, CW;Chang, TC;Liu, PT;Lu, HY;Tsai, TM
- Analysis of poly-Si TFT degradation under gate pulse stress using the slicing model / Tai, Ya-Hsiang;Huang, Shih-Che;Chen, Chien-Kwen
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