| Title: | 具有奈米尺寸通道之蕭特基薄膜電晶體元件研製與分析 Fabrication and Characterization of Schottky Barrier Poly-Si Thin-Film Transistors with Nano-Scale Channel |
| Authors: | 黃調元 TIAO-YUANHUANG 國立交通大學電子工程學系 |
| Issue Date: | 2003 |
| Gov't Doc #: | NSC92-2215-E009-062 |
| URI: | http://hdl.handle.net/11536/92013 https://www.grb.gov.tw/search/planDetail?id=873546&docId=167358 |
| Appears in Collections: | Research Plans |
- 具奈米級通道寬度之矽化鈷蕭特基障位的複晶矽薄膜電晶體研究 / 林文傑;Wun Jey Lin;黃調元;林鴻志;Tiao Yuan Huang
- Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure / Kuo, PY;Chao, TS;Lei, TF
- 平面式獨立雙閘極多晶矽SONOS記憶體元件以及非對稱式蕭特基能障薄膜電晶體之製作與特性分析 / 余曉惠;林鴻志;黃調元
- 具鰭狀通道之蕭特基源/汲極SOI場效電晶體之製作與分析 / 侯福居;Fu Ju Hou;黃調元;林鴻志;Tiao Yuan Huang
Loading...