Title: 金屬閘極金氧半場效電晶體關鍵技術(I)
Key Technologies of Metal Gate MOSFET (I)
Authors: 崔秉鉞
Bing-YueTsui
國立交通大學電子工程學系
Keywords: 金屬閘極;金氧半導體場效電晶體;關鍵技術;Metal gate;MOSFET;Key technology
Issue Date: 2001
Gov't Doc #: NSC90-2215-E009-064
URI: http://hdl.handle.net/11536/93429
https://www.grb.gov.tw/search/planDetail?id=665689&docId=126370
Appears in Collections:Research Plans