| Title: | 砷化鎵功率電晶體銅金屬化製程可行性之研究 The Feasibility Study of Copper Metallization for GaAs Power MESFET Devices |
| Authors: | 張翼 國立交通大學材料科學與工程學系 |
| Issue Date: | 2000 |
| Gov't Doc #: | NSC89-2215-E009-111 |
| URI: | http://hdl.handle.net/11536/93772 https://www.grb.gov.tw/search/planDetail?id=583915&docId=109713 |
| Appears in Collections: | Research Plans |
- The performance of GaAs power MESFET's using backside copper metallization / Chen, CY;Chang, L;Chang, EY;Chen, SH;Lin, YC
- Backside copper metallization of GaAs MESFET's using Ta and TaN as diffusion barrier / Chang, EY;Chen, CY;Chang, L;Chen, SH
- Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier / Chen, CY;Chang, EY;Chang, L;Chen, SH
- 砷化鎵功率金屬半導體場效電晶體銅金屬化之研究 / 陳長有;Chang-You Chen;張 立;Li Chang
- 高崩潰電壓磷化銦鎵通道場效電晶體之研發 / 陳世宏;S. H. Chen;張翼;Dr. Edward Y. Chang
- SPDT GaAs switches with copper metallized interconnects / Wu, Y. C.;Chang, E. Y.;Lin, Y. C.;Hsu, H. T.;Chen, S. H.
- 具有光化學氣相沈積及電漿加強化學氣相沈積氮化矽保護層之砷化鎵功率金屬半導體場效電晶體之研究 / 林文中;Lin, Wen Chung;張翼;Edward Y. Chang
Loading...