高介電氧化鋁閘極於下世代深次微米技術的應用

Title:	高介電氧化鋁閘極於下世代深次微米技術的應用 High-K Al/sub 2/O/sub 3/ gate dielectrics on next generation VLSI technology
Authors:	荊鳳德 CHIN ALBERT 國立交通大學電子工程學系
Issue Date:	2000
Gov't Doc #:	NSC89-2215-E009-099
URI:	http://hdl.handle.net/11536/93871 https://www.grb.gov.tw/search/planDetail?id=583871&docId=109702
Appears in Collections:	Research Plans

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