| Title: | 金屬氧化物後段主動元件技術開發 Development of Active BEOL Metal-Oxide Device Technologies |
| Authors: | 林鴻志 LIN HORNG-CHIH 國立交通大學電子工程學系及電子研究所 |
| Issue Date: | 2014 |
| Gov't Doc #: | NSC102-2221-E009-097-MY3 |
| URI: | http://hdl.handle.net/11536/94164 https://www.grb.gov.tw/search/planDetail?id=8105597&docId=428334 |
| Appears in Collections: | Research Plans |
- 金屬氧化物後段主動元件技術開發 / 林鴻志;LIN HORNG-CHIH
- 金屬氧化物後段主動元件技術開發 / 林鴻志;LIN HORNG-CHIH
- Comparison of MiM performance with various electrodes and dieletric in Cu dual damascene of CMOS MS/RF technology / King, M. C.;Chang, C. F.;Lin, H. J.;Chin, Albert
- 半導體後段製程誘發之高阻抗研究 / 林政綱;張國明
- BEOL Reliability Enhancement by Applying New Capping Materials / Chang, Hui-Lin;Chang, Chi Tso
- Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering / Shie, Bo-Shiuan;Lin, Horng-Chih;Lyu, Rong-Jye;Huang, Tiao-Yuan
- A Platform with Exquisite Film Profile Engineering in Oxide-Based Thin-Film Transistors for More-than-Moore Applications / Lin, Horng-Chih;Huang, Yu-An
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