Title: 氮化鎵材料製程開發及元件製作(I)
GaN-Based Fabrication Process Development and Device Fabrication(I)
Authors: 王興宗
WANG SHING CHUNG
國立交通大學光電工程研究所
Keywords: 氮化鎵;製程開發;GaN;Process development
Issue Date: 2001
Gov't Doc #: NSC90-2215-E009-102
URI: http://hdl.handle.net/11536/94732
https://www.grb.gov.tw/search/planDetail?id=660682&docId=125042
Appears in Collections:Research Plans