| Title: | 次微米元件內氧化層缺陷暫態特性量測技術 Oxide Trap Transient Spectroscopy in a MOSFET |
| Authors: | 汪大暉 WANG TAHUI 交通大學電子工程系 |
| Keywords: | 氧化層缺陷;暫態特性;空間分布;電場效應;Oxide trap;Transient characteristics;Spatial distribution;Field effect |
| Issue Date: | 1998 |
| Gov't Doc #: | NSC87-2215-E009-060 |
| URI: | http://hdl.handle.net/11536/95073 https://www.grb.gov.tw/search/planDetail?id=409152&docId=72447 |
| Appears in Collections: | Research Plans |
- 利用暫態電流量測技術研究超大型積體電路元件中氧化層之可靠度 / 張澤恩;Chang, Tse-En;汪大暉;Tahui Wang
- 穿隧氧化層內漏電流之暫態特性與物理機制 / 汪大暉;WANG TAHUI
- Characterization of various stress-induced oxide traps in MOSFET's by using a subthreshold transient current technique / Wang, TH;Chiang, LP;Zous, NK;Chang, TE;Huang, C
- 一種新式氧化層缺陷量測方法 / 蔣汝平;Chiang, Lu-Ping;汪大暉;Tahui Wang
- 深次微米元件中熱載子效應所引發之氧化層可靠度 / 蔣汝平;Lu-Ping Chiang;汪大暉;Tahui Wang
- Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique / Wang, TH;Chiang, LP;Zous, NK;Chang, TE;Huang, C
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