金氧半電晶體內界面缺陷所產生汲極漏電流的物理機制與實驗量測

Title:	金氧半電晶體內界面缺陷所產生汲極漏電流的物理機制與實驗量測 Mechanisms and Characterization of Interface Trap Induced Drain Leakage Current in Si n-MOSFET's
Authors:	汪大暉 WANG TAHUI 國立交通大學電子工程學系
Keywords:	界面缺陷;汲極漏電流;物理機制;模擬;金氧半場效電晶體;Interface trap;Drain leakage current;Physical mechanism;Simulation;MOSFET
Issue Date:	1996
Gov't Doc #:	NSC85-2215-E009-050
URI:	http://hdl.handle.net/11536/95790 https://www.grb.gov.tw/search/planDetail?id=230199&docId=41827
Appears in Collections:	Research Plans