| Title: | 次微米MOS元件中反向短通道效應特性分析與模式 The Characterization and Modeling of the Reverse Short Channel Effect in Submicron MOS Devices |
| Authors: | 莊紹勳 Chung Steve S 國立交通大學電子工程研究所 |
| Issue Date: | 1995 |
| Gov't Doc #: | NSC84-2215-E009-075 |
| URI: | http://hdl.handle.net/11536/96414 https://www.grb.gov.tw/search/planDetail?id=172275&docId=29275 |
| Appears in Collections: | Research Plans |
- 具有反向短通道效應N型MOS元件性能及可靠性的研究 / 莊紹勳;Chung Steve S
- 深次微米元件研製及特性分析 / 黃調元;TIAO-YUANHUANG
- 次微米N型MOS元件中反向短通道效應之模式及其特性分析 / 鄭水明;莊紹勳
- 次微米大斜角植入式金氧半元件之特性分析與設計準則 / 周鵬程;Peng-Cheng Chou;莊紹勳;Steve S.Chung
- Direct observation of the lateral nonuniform channel doping profile in submicron MOSFET's from an anomalous charge pumping measurement results / Chung, SS;Cheng, SM;Lee, GH;Guo, JC
- TRANSCONDUCTANCE ENHANCEMENT DUE TO BACK BIAS FOR SUBMICRON NMOSFET / GUO, JC;CHANG, MC;LU, CY;HSU, CCH;CHUNG, SSS
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