超薄閘極氧化層元件可靠性研究

Title:	超薄閘極氧化層元件可靠性研究 Ultra-Thin Gate Dielectric CMOS Device Reliability
Authors:	汪大暉 WANG TAHUI 國立交通大學電子工程學系
Keywords:	超薄閘極;可靠度;氧化層;協助金屬-氧化物-半導體元件;Ultra-thin gate;Reliability;Oxide layer;CMOS device
Issue Date:	2001
Gov't Doc #:	NSC90-2215-E009-069
URI:	http://hdl.handle.net/11536/96741 https://www.grb.gov.tw/search/planDetail?id=665707&docId=126375
Appears in Collections:	Research Plans

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