| Title: | 以原子層磊晶術研製氮化鎵系列薄膜 The Preparation of Gan and Related Thin Films by Atomic Laye |
| Authors: | 龔志榮 GONG JYH-RONG 私立逢甲大學材料科學系 |
| Issue Date: | 1994 |
| Gov't Doc #: | NSC83-0404-E035-001 |
| URI: | http://hdl.handle.net/11536/97449 https://www.grb.gov.tw/search/planDetail?id=111030&docId=17779 |
| Appears in Collections: | Research Plans |
- Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substrates / Lee, Fang-Wei;Ke, Wen-Cheng;Cheng, Chun-Hong;Liao, Bo-Wei;Chen, Wei-Kuo
- Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy / Wong, Yuen-Yee;Chang, Edward Yi;Wu, Yue-Han;Hudait, Mantu K.;Yang, Tsung-Hsi
- 以電漿輔助式分子束磊晶成長應用於高電子遷移率電晶體之氮化鋁鎵/氮化鎵異質結構 / 黃延儀;Wong, Yuen-Yee;張翼;Chang, Edward Yi
- Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy / Chen, Kuei-Ming;Huang, Hsin-Hsiung;Kuo, Yi-Lin;Wu, Pei-Lun;Chu, Ting-Li
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