軍用射頻關鍵元組件技術開發

Abstract

「主動相位陣列雷達」相較於傳統機械式雷達具有較佳的反應速度、多功能性、電子反制能力，近年來受到世界各先進國家的矚目，並將其配置在戰機、艦艇以及防空系統中。由於氮化鎵(GaN)材料具有寬能帶、高崩潰電場強度、高電子遷移率、高耐溫特性，再結合氮化矽基材高散熱特性，製作成氮化鎵(GaN)電子元件後，可同時具備高頻、高功率、高線性度及高效率的優異特性，相當適合應用此一關鍵模組技術在主動相列雷達系統之開發。因此，本計畫將致力於氮化鎵高功率電子元件研究開發，首先將利用模擬軟體將氮化鎵高頻高功率電子元件之結構及佈局最佳化，亦於高散熱低晶格不匹配度之碳化矽基板開發氮化鎵/氮化鋁鎵(GaN/AlGaN)磊晶成長技術，並開發高散熱性氮化鎵/氮化鋁鎵HEMT on SiC高電子遷移率射頻功率元件製程技術。

The Active Phased Array Radars (APAR) provides better reactive speed, multi-function, and electronic counter ability as compared with traditional mechanical radars. Recently, the developed countries in the world pay much attentions to the APAR and apply it to the fighter airplanes, warships, and air defense systems. Due to the superior characteristics of wide bandgap, high breakdown electrical field, high electron mobility, high temperature stability, and high heat dispassion capabilities of GaN materials, the GaN electronic devices demonstrate superior performances including high frequency, high power, high linearity, and high efficiency and are suitable for the application of APAR. Therefore, our proposal aims at the research and development of high power GaN electronic devices. First, we adopt modeling software to optimize the structures and layouts for high frequency and high power GaN devices. Besides, we will develop the GaN/AlGaN epitaxy growth technique on SiC substrates which usually has better device quality due to low lattice mismatch and better heat dissipation capability of SiC. Finally, we will develop process the technology of GaN/AlGaN HEMT devices on SiC substrates for high frequency and high power applications.