标题: 脉冲压化学气相沈积制程传输现象之模拟研究
Simulation of the Transport Phenomena in a Pulsed-Pressure Chemical Vapor Deposition (PPCVD) Process
作者: 林宗汉
吴宗信
Jong-Shinn Wu
工学院精密与自动化工程学程
关键字: 脉冲压化学气相沈积;均匀度;震波;Pulsed-Pressure CVD;Uniformity;Shock
公开日期: 2007
摘要: 脉冲压化学气相沉积(PPCVD)制程,在先前的研究就已经被证实它与传统的热化学气相沉积过程相比,可以产生高度均匀的沈积薄膜。此外,实验研究发现,PPCVD制程有非常高的反应物转换效率,甚至可高达95 %。在扩大规模(Scale up)的过程中,为了使PPCVD在薄膜沈积过程中成为一个真正可行的工具,非常需要详细瞭解PPCVD制程传输现象。在本论文中,使用平行化的Navier-Stokes equation solver来模拟一个典型PPCVD制程中流体传输细微的变化。在泵工作的过程下,模拟的时间达0.1秒。试验条件包括固定上游全压(105 Pa)和全温(300K)和各种反应器压力(背压)从102到104 Pa,基板温度从300K至800K。在PPCVD反应器内可发现非常复杂的瞬时流场,并讨论其可能性。在本论文中也评论使用Navier-Stokes equation solver求解PPCVD制程的效度。
Previously pulsed-pressure chemical vapor deposition (PPCVD) process has been demonstrated it could yield highly uniform thin film deposition as compared to conventional thermal chemical vapor deposition process. In addition, very high material conversion efficiency up to 95% was found experimentally. To scale up the process as a practical tool in thin film deposition, detailed understanding of transport phenomena of PPCVD process is stronly required. In this thesis, a parallelized Navier-Stokes equation solver is used to simulate the detailed transient flow structures in a typical PPCVD process during the pump-up process up to 0.1 seconds. Test conditions include fixed upstream stagnation pressure (100,000 Pa) and temperature (300K) and various initial background pressures in the range of 100 through 1,000 Pa. In addition, substrate temperature ranges from 300K to 800K. Very complicated transient flow fields are found inside the PPCVD chamber and discussed wherever are possible. Comments on the validity of using Navier-Stokes equation solver for PPCVD are also presented at the end of the thesis.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009469525
http://hdl.handle.net/11536/82542
显示于类别:Thesis


文件中的档案:

  1. 952501.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.