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公開日期標題作者
1-九月-2008InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier applicationKuo, Chien-I; Hsu, Hen-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; 材料科學與工程學系; Department of Materials Science and Engineering
2009A Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave ApplicationsKuo, Chien-I; Hsu, Heng-Tung; Lu, Jung-Chi; Chang, Edward Yi; Wu, Chien-Ying; Miyamoto, Yasuyuki; Tsern, Wen-Chung; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2010RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave ApplicationsKuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2010RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave ApplicationsKuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra; 材料科學與工程學系; Department of Materials Science and Engineering
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