Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 張翼 | en_US |
dc.contributor.author | 張嘉華 | en_US |
dc.contributor.author | 林岳欽 | en_US |
dc.date.accessioned | 2014-12-16T06:12:08Z | - |
dc.date.available | 2014-12-16T06:12:08Z | - |
dc.date.issued | 2012-05-16 | en_US |
dc.identifier.govdoc | H01L021/335 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/103452 | - |
dc.description.abstract | 本發明提供一種氮化鎵電晶體的製作方法,包含一準備步驟、一開口形成步驟、一離子佈値步驟、一介電層形成步驟、一源/汲極沉積步驟,及一閘極沉積步驟,首先準備一含N型氮化鎵系半導體材料的半導體磊晶層,於該半導體磊晶層上形成一定義出一開口的遮覆層,接著對該半導體磊晶層進行P型離子佈値,於該半導體磊晶層形成一摻雜區,再於該半導體磊晶層表面沉積一層由高介電常數材料構成的介電層,之後於該半導體磊晶層表面對應該摻雜區兩側形成一源極及一汲極,再於對應該摻雜區上方的介電層表面形成一閘極,即可完成該氮化鎵電晶體的製作。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 氮化鎵電晶體的製作方法 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | 201220405 | zh_TW |
Appears in Collections: | Patents |
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