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dc.contributor.authorChuang, Shiow-Hueyen_US
dc.contributor.authorChiu, Hsin-Tienen_US
dc.contributor.authorChou, Yi-Hsuanen_US
dc.contributor.authorChen, Shiou-Fanen_US
dc.date.accessioned2014-12-08T15:15:20Z-
dc.date.available2014-12-08T15:15:20Z-
dc.date.issued2006-12-01en_US
dc.identifier.issn0009-4536en_US
dc.identifier.urihttp://hdl.handle.net/11536/11500-
dc.description.abstractAn organoimido complex of tungsten, bis(tertbutylimido)bis(diethylamido)tungsten, W((NBu)-Bu-t)(2)(NEt2)(2), is used as a single source precursor to deposit thin films of cubic phase tungsten carbonitride, WCxNy (x: 0.21-0.38, y: 0.62-0.76), by metal-organic chemical vapor deposition on silicon substrates. In general, the N/W and C/W ratios decreased from 0.76 to 0.62 and 0.38 to 0.21, respectively with increasing the temperature of deposition from 500 to 650 degrees C. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon and nitrogen atoms were incorporated through the activation of the ligands.en_US
dc.language.isoen_USen_US
dc.subjecttungsten nitrideen_US
dc.subjecttungsten carbonitrideen_US
dc.subjectchemical vapor depositionen_US
dc.titleGrowth of ternary WCxNy thin films from a single-source precursor, W((NBu)-Bu-t)(2)(NEt2)(2)en_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE CHINESE CHEMICAL SOCIETYen_US
dc.citation.volume53en_US
dc.citation.issue6en_US
dc.citation.spage1391en_US
dc.citation.epage1395en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000244623400024-
dc.citation.woscount3-
Appears in Collections:Articles