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dc.contributor.authorLi, Hsiang-Weien_US
dc.contributor.authorYin, Yu-Fengen_US
dc.contributor.authorChang, Chen-Yuen_US
dc.contributor.authorTsai, Chen-Hungen_US
dc.contributor.authorHsu, Yen-Hsiangen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorWu, Yuh-Rennen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHuang, Jian Jangen_US
dc.date.accessioned2015-07-21T11:21:03Z-
dc.date.available2015-07-21T11:21:03Z-
dc.date.issued2014-12-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2014.2362552en_US
dc.identifier.urihttp://hdl.handle.net/11536/123885-
dc.description.abstractThe unique properties of nonpolar GaN light-emitting diodes (LEDs) have the advantages of generating polarized light emission. The employment of asymmetric 2-D photonic crystals (PhCs) can further enhance the light polarization ratio. In addition, it was generally recognized that the Purcell effect can increase the internal quantum efficiency of the LEDs with PhCs. In this paper, we study the properties of optical modes from different crystal planes. The Purcell effect is analyzed based on the PhCs and material crystal orientations. With different transition probability of the polarized photons in valence bands, the corresponding Purcell effect enhancement on the quantum efficiency varies.en_US
dc.language.isoen_USen_US
dc.subjectLight-emitting diodesen_US
dc.subjectnon-polar GaNen_US
dc.subjectphotonic crystalen_US
dc.subjectpurcell effecten_US
dc.titleMechanisms of the Asymmetric Light Output Enhancements in a-Plane GaN Light-Emitting Diodes With Photonic Crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2014.2362552en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume50en_US
dc.citation.issue12en_US
dc.citation.spage951en_US
dc.citation.epage956en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000344478600002en_US
dc.citation.woscount0en_US
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