標題: | Toward high efficiency and panel size 30 x 40 cm(2) Cu(I,Ga)Se-2 solar cell: Investigation of modified stacking sequences of metallic precursors and pre-annealing process without Se vapor at low temperature |
作者: | Wu, Tsung-Ta Huang, Jyun-Hong Hu, Fan Chang, Chia-ho Liu, Wen-Long Wang, Tsang-Hsiu Shen, Chang-Hong Shieh, Jia-Min Chueh, Yu-Lun 光電學院 影像與生醫光電研究所 College of Photonics Institute of Imaging and Biomedical Photonics |
關鍵字: | Cu(InGa)Se-2;Stacked precursor;Pre-annealing;Setenization;Ga depth profile |
公開日期: | 1-十一月-2014 |
摘要: | Modified stacking sequence of precursors and pre-annealing process on Se vapor at low temperature were applied to Cu(ln,Ga)Se-2 (CIGS) solar. The remarkable improvement of efficiency (5.53-10.10% and further 11.04%) and open circuit voltage (0.41 V-0.53 V and further 0.56 V) comes from a compact, smooth microstructure, and modified depth profile of Ga with suitable thickness of CuGa multi-stacking layers in the top of precursors as well as surface bandgap enhancement via pre-nnealing process without Se vapor followed by a specific non-toxic hydrogen-assisted solid Se vapor selenization process. The effects of microstructural, compositional and electrical characteristics of Ga distribution including accumulation and interdiffusion were examined in detail. Finally, a large-area (40 x 30 cm(2)) CIGS solar cell efficiency with improved open circuit voltage (V-OC) and fill factor (FE) of 36% and 14% has been demonstrated, yielding a promising efficiency of similar to 11.04%. (C) 2014 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.nanoen.2014.07.018 http://hdl.handle.net/11536/124140 |
ISSN: | 2211-2855 |
DOI: | 10.1016/j.nanoen.2014.07.018 |
期刊: | NANO ENERGY |
Volume: | 10 |
起始頁: | 28 |
結束頁: | 36 |
顯示於類別: | 期刊論文 |