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dc.contributor.authorChen, Yu-Anen_US
dc.contributor.authorChang, Chia-Weien_US
dc.contributor.authorKuo, Cheng-Huangen_US
dc.date.accessioned2015-12-02T02:59:35Z-
dc.date.available2015-12-02T02:59:35Z-
dc.date.issued2015-11-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2015.2478969en_US
dc.identifier.urihttp://hdl.handle.net/11536/128377-
dc.description.abstractNumerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10-mu m-thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10-mu m-thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.en_US
dc.language.isoen_USen_US
dc.subjectHVPEen_US
dc.subjectPSSen_US
dc.subjectAlNen_US
dc.subjectLEDen_US
dc.titleNumerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-mu m-Thick n-GaN Templateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2015.2478969en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume36en_US
dc.citation.issue11en_US
dc.citation.spage1135en_US
dc.citation.epage1137en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000364094300008en_US
dc.citation.woscount0en_US
Appears in Collections:Articles