Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Yu-An | en_US |
dc.contributor.author | Chang, Chia-Wei | en_US |
dc.contributor.author | Kuo, Cheng-Huang | en_US |
dc.date.accessioned | 2015-12-02T02:59:35Z | - |
dc.date.available | 2015-12-02T02:59:35Z | - |
dc.date.issued | 2015-11-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2015.2478969 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/128377 | - |
dc.description.abstract | Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10-mu m-thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10-mu m-thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | HVPE | en_US |
dc.subject | PSS | en_US |
dc.subject | AlN | en_US |
dc.subject | LED | en_US |
dc.title | Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-mu m-Thick n-GaN Template | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2015.2478969 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 36 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 1135 | en_US |
dc.citation.epage | 1137 | en_US |
dc.contributor.department | 照明與能源光電研究所 | zh_TW |
dc.contributor.department | Institute of Lighting and Energy Photonics | en_US |
dc.identifier.wosnumber | WOS:000364094300008 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |