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dc.contributor.authorHuang, Jyun-Hongen_US
dc.contributor.authorChen, Hsing-Hungen_US
dc.contributor.authorLiu, Pang-Shiuanen_US
dc.contributor.authorLu, Li-Syuanen_US
dc.contributor.authorWu, Chien-Tingen_US
dc.contributor.authorChou, Cheng-Tungen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.date.accessioned2017-04-21T06:55:46Z-
dc.date.available2017-04-21T06:55:46Z-
dc.date.issued2016-06en_US
dc.identifier.issn2053-1591en_US
dc.identifier.urihttp://dx.doi.org/10.1088/2053-1591/3/6/065007en_US
dc.identifier.urihttp://hdl.handle.net/11536/134153-
dc.description.abstractDirect magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).en_US
dc.language.isoen_USen_US
dc.subjectMoS2en_US
dc.subjectsputteren_US
dc.subjecttransition metal dichalcogenideen_US
dc.titleLarge-area few-layer MoS2 deposited by sputteringen_US
dc.identifier.doi10.1088/2053-1591/3/6/065007en_US
dc.identifier.journalMATERIALS RESEARCH EXPRESSen_US
dc.citation.volume3en_US
dc.citation.issue6en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380799600009en_US
Appears in Collections:Articles