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dc.contributor.authorChou, Yu-Hsunen_US
dc.contributor.authorHong, Kuo-Binen_US
dc.contributor.authorChou, Bo-Tsunen_US
dc.contributor.authorWu, Yen-Moen_US
dc.contributor.authorShih, Jheng-Hongen_US
dc.contributor.authorChung, Yi-Chengen_US
dc.contributor.authorChen, Peng-Yuen_US
dc.contributor.authorLin, Tzy-Rongen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2017-04-21T06:49:21Z-
dc.date.available2017-04-21T06:49:21Z-
dc.date.issued2016en_US
dc.identifier.isbn978-4-8855-2306-9en_US
dc.identifier.issn2326-5442en_US
dc.identifier.urihttp://hdl.handle.net/11536/134575-
dc.description.abstractMetal-insulator-semiconductor structures has widely adopted in plasmonics lasers. However, we found that the insulator is not necessary if permittivity combination of laser structures is properly designed. Single-mode laser operation was demonstrate in devices without artificial insulator layers. Moreover, the operation temperature can achieve to 353 K.en_US
dc.language.isoen_USen_US
dc.subjectMetal-insulator-semiconductor (MIS) structuresen_US
dc.subjectsurface plasmon polariton (SPP)en_US
dc.subjectNanolaseren_US
dc.subjectZnOen_US
dc.subjectAluminumen_US
dc.titleHigh-operation-temperature Aluminum-based SPP Nanolasersen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000392249800110en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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