Growth and Electroluminescent Property of Multi-Facet InGaN/GaN Multiple Quantum Well Light Emitting Device

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DC Field	Value	Language
dc.contributor.author	Li, Yun-Jing	en_US
dc.contributor.author	Chang, Shih-Pang	en_US
dc.contributor.author	Cheng, Yuh-Jen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.date.accessioned	2017-04-21T06:49:13Z	-
dc.date.available	2017-04-21T06:49:13Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-55752-968-8	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134623	-
dc.description.abstract	We report the study of InGaN/GaN multiple quantum wells (MQWs) grown on multi-facet microrods. The multi-facet MQWs have broad emission spectrum. Electrical injection was demonstrated with emission color ranged from red to blue.	en_US
dc.language.iso	en_US	en_US
dc.title	Growth and Electroluminescent Property of Multi-Facet InGaN/GaN Multiple Quantum Well Light Emitting Device	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000370627101066	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper