| Title: | Impact of Body Bias on the High Frequency Performance of Partially Depleted SOI MOSFETs |
| Authors: | Huang, Guo-Wei Chen, Kun-Ming Chen, Han-Yu Huang, Chi-Huan Chang, Chun-Yen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 2008 |
| URI: | http://hdl.handle.net/11536/135078 |
| ISBN: | 978-1-4244-2641-6 |
| Journal: | APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5 |
| Begin Page: | 3151 |
| End Page: | + |
| Appears in Collections: | Conferences Paper |
- Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs / Chan, M;Su, P;Wan, H;Lin, CH;Fung, SKH
- On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs / Wang, Sheng-Chun;Su, Pin;Chen, Kun-Ming;Lin, Chien-Ting;Liang, Victor
- On the prediction of geometry-dependent floating-body effect in SOI MOSFETs / Su, P;Lee, W
- Hot-carrier-induced degradation for partially depleted SOI 0.25-0.1 mu m CMOSFET with 2-nm thin gate oxide / Yeh, WK;Wang, WH;Fang, YK;Chen, MC;Yang, FL
- Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs / Wang, Sheng-Chun;Su, Pin;Chen, Kun-Ming;Chen, Bo-Yuan;Huang, Guo-Wei
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