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dc.contributor.authorCho, ATen_US
dc.contributor.authorPan, FMen_US
dc.contributor.authorChao, KJen_US
dc.contributor.authorLiu, PHen_US
dc.contributor.authorChen, JYen_US
dc.date.accessioned2014-12-08T15:18:48Z-
dc.date.available2014-12-08T15:18:48Z-
dc.date.issued2005-07-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2005.01.004en_US
dc.identifier.urihttp://hdl.handle.net/11536/13516-
dc.description.abstractThe ozone ash treatment has been demonstrated to effectively remove the organic template at 200-300 degrees C as well as to enhance the mechanical strength of mesoporous silica films. The resulting films are of ordered pore structure, strong mechanical strength, and smooth surface. After reacting with hexamethyidisilazane, the silica film has been modified to hydrophobic from hydrophilic and exhibits an ultra-low dielectric constant (k <= 2) and a low leakage current density (10(-7) A/cm(2)) with good electrical reliability. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectozone ashingen_US
dc.subjectlow-ken_US
dc.subjectthin filmen_US
dc.subjectmesoporous silicaen_US
dc.titleThe preparation of mesoporous silica ultra-low-k film using ozone ashing treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2005.01.004en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume483en_US
dc.citation.issue1-2en_US
dc.citation.spage283en_US
dc.citation.epage286en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000229681700047-
dc.citation.woscount12-
Appears in Collections:Articles


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