The Experimental Study of THz Image Sensor in 0.18 mu m CMOS Technology

Abstract

In this study, four different types of power detectors are implemented in 0.18 mu m CMOS technology for the THz image sensor application. These power detectors include common-source with and without supply voltage, and common gate with and without supply voltage. The measured responsivities at 332 GHz are 632 kV/W, 13.2 kV/W, 16.2 kV/W, and 9.1 kV/W, respectively. The image resolution of the proposed THz sensor is 2 mm.