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dc.contributor.authorChou, Hen_US
dc.contributor.authorHong, ZYen_US
dc.contributor.authorSun, SJen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorChang, WJen_US
dc.date.accessioned2014-12-08T15:19:09Z-
dc.date.available2014-12-08T15:19:09Z-
dc.date.issued2005-05-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1850378en_US
dc.identifier.urihttp://hdl.handle.net/11536/13715-
dc.description.abstractThe p-n junction made by colossal magnetoresistance materials, such as La0.7Ce0.3MnO3/La0.7Ca0.3MnO3, has great interest for its potential applications. However, the physics of the magnetic state and transport properties of the interface still remains open. In this article, bilayer La0.7Ce0.3MnO3/La0.7Ca0.3MnO3/STO films with a nearly perfect interface were studied. The p-n interface possibly becomes an antiferromagnetion-insulating layer as their parent compound, LaMnO3, and confines the bias current flowing only on the top layer. The top and bottom layers interact with each other in a way that a strong anisotropy tin magnetoresistance measurements was observed. (c) 2005 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleStrong anisotrpoic maganetoresistance and magnetic interaction in La0.7Ce0.3Mn0.3/La0.7Ca0.3MnO3 p-n junctionen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1063/1.1850378en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume97en_US
dc.citation.issue10en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000230168300009-
Appears in Collections:Conferences Paper


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